Microsoft Word - ECRP review_FINAL from RF
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Microsoft Word - 71.DOC
Significant progress has been achieved in making larger (2 inch) 4H-SiC substrates with much lower micropipe defect densities. With the recent availability of semi-insulating 4H-SiC substrates, the demonstration of impressive microwave power results have been made possible both in SiC MESFETs and in GaN/AlGaN HEMTs grown on these substrates. SiC MESFETs have achieved RF power densities of 4.6 W...
متن کاملMicrosoft Word - ROCS 2012 manuscript DJin v5
We have investigated the impact of highpower (HP) stress on the dynamic ON-resistance (RON) in high-voltage GaN High-Electron-Mobility Transistors (HEMT). We use a newly proposed dynamic RON measurement methodology which allows us to observe RON transients after an OFF-to-ON switching event from 200 ns up to any arbitrary length of time over many decades. We find that HP-stress results in much ...
متن کاملRachael Beddoe_Lit Review_Final 122609
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متن کاملMicrosoft Word - TVLSI_Draft_Final
High-speed wireless network interfaces are among the most power-hungry components on mobile systems that rely on battery for energy supply and passive means for heat dissipation. This is particularly true for MIMO network interfaces which use multiple RF chains simultaneously. In this paper, we present a novel power management mechanism for MIMO network interfaces on mobile systems, called ante...
متن کاملMicrosoft Word - ISMRM2005-003424.DOC
P. E. Larson, D. G. Nishimura, J. M. Pauly Electrical Engineering, Stanford University, Stanford, CA, United States Introduction: Ultra-short echo time (UTE) imaging has recently become of interest for possible clinical applications [1,2]. Long-T2 species dominate UTE images if they are not suppressed. We introduce a new set of long-T2 suppression pulses designed with the Shinnar-Le Roux (SLR) ...
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تاریخ انتشار 2011